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trenchfet power mosfet 175 c junction temperature pwm optimized

primary side switch SUD25N15-52 vishay siliconix new product document number: 71768 s-05234?rev. a, 17-dec-01 www.vishay.com 1 n-channel 150-v (d-s) 175 c mosfet v ds (v) r ds(on) ( ) i d (a) 0.052 @ v gs = 10 v 25 150 0.060 @ v gs = 6 v 23 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD25N15-52

parameter symbol limit unit drain-source voltage v ds 150 gate-source voltage v gs 20 v t c = 25 c 25 continuous drain current (t j = 175 c) b t c = 125 c i d 14.5 pulsed drain current i dm 50 a continuous source current (diode conduction) i s 25 avalanche current i ar 25 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 31 mj t c = 25 c 100 b maximum power dissipation t a = 25 c p d 3 a w operating junction and storage temperature range t j , t stg ?55 to 175 c

parameter symbol typical maximum unit t 10 sec 15 18 junction-to-ambient a steady state r thja 40 50 c/w junction-to-case (drain) r thjc 1.3 1.6 c/w notes a. surface mounted on 1? x1? fr4 board. b. see soa curve for voltage derating.
SUD25N15-52 vishay siliconix new product www.vishay.com 2 document number: 71768 s-05234 ? rev. a, 17-dec-01

parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 150 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 120 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 120 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 120 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 5 a 0.042 0.052 v gs = 10 v, i d = 5 a, t j = 125 c 0.109 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 5 a, t j = 175 c 0.145 v gs = 6 v, i d = 5 a 0.047 0.060 forward transconductance b g fs v ds = 15 v, i d = 25 a 40 s dynamic a input capacitance c iss 1725 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 216 pf reverse transfer capacitance c rss 100 total gate charge c q g 33 40 gate-source charge c q gs v ds = 75 v, v gs = 10 v, i d = 25 a 9 nc gate-drain charge c q gd ds gs d 12 turn-on delay time c t d(on) 15 25 rise time c t r v dd = 50 v, r l = 3 70 100 turn-off delay time c t d(off) v dd = 50 v, r l = 3 i d 25 a, v gen = 10 v, r g = 2.5 25 40 ns fall time c t f 60 40 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 50 a diode forward voltage b v sd i f = 25 a, v gs = 0 v 0.9 1.5 v source-drain reverse recovery time t rr i f = 25 a, di/dt = 100 a/ s 95 140 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUD25N15-52 vishay siliconix new product document number: 71768 s-05234 ? rev. a, 17-dec-01 www.vishay.com 3

0 10 20 30 40 50 60 0 1020304050 0 500 1000 1500 2000 2500 0 30 60 90 120 150 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 10 20 30 40 50 0246810 0 4 8 12 16 20 0 102030405060 0.00 0.02 0.04 0.06 0.08 0.10 0 1020304050 0 10 20 30 40 50 01234567 ? 55 c 6 v t c = 125 c v ds = 75 v i d = 25 a v gs = 10 thru 7 v 4 v v gs = 10 v v gs = 6 v t c = ? 55 c 25 c 125 c c oss c iss i d ? drain current (a) 5 v 25 c c rss
SUD25N15-52 vishay siliconix new product www.vishay.com 4 document number: 71768 s-05234 ? rev. a, 17-dec-01

0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 5 a t j = 25 c t j = 150 c 0
safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 10 0.1 0.1 1 10 1000 limited by r ds(on) 1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 10 ms 100 ms 1 s, dc 30 100 s 10 s 100 1 ms 0.05 0.02 single pulse

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